Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials
	Jiao Xinbing ; Wei JS(魏劲松) ; Gan FX(干福熹) ; Xiao Mufei
刊名	appl. phys. a-mater. sci. process.
	2009
卷号	94 期号:3 页码:627
关键词	LASER-INDUCED CRYSTALLIZATION RICH AGINSBTE FILMS CHANGE OPTICAL DISK CHANGE MEDIA DATA-STORAGE THIN-FILMS SUPERRESOLUTION NUCLEATION MICROSCOPY GE2SB2TE5
ISSN号	0947-8396
中文摘要	the dependence of thermal properties of ag8in14sb55te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. the results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. the heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 j/g k, 1.85 mm(2)/s, and 4.0 w/m k at 300 k to 0.025 j/g k, 1.475 mm(2)/s, and 0.25 w/m k at 600 k, respectively. in the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. within the temperature range from 320 k to 440 k, the heat capacity fluctuates between 0.27 j/g k and 0.075 j/g k, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 w/m k at 320 k to 0.2 w/m k at 440 k. whether in the crystalline or amorphous state, ag8in14sb55te23 are more thermally active than ge2sb2te5, that is, the ag8in14sb55te23 composites bear stronger thermal conduction and diffusion than the ge2sb2te5 phase-change memory materials.
学科主题	光存储
资助信息	national natural science foundation of china [50772120, 60507009]; shanghai key basic research [06dj14007]; national basic research program of china [2007cb935400]
语种	英语
公开日期	2009-09-22 ; 2010-10-12
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4087]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Jiao Xinbing,Wei JS,Gan FX,et al. Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials[J]. appl. phys. a-mater. sci. process.,2009,94(3):627, 631.
APA	Jiao Xinbing,魏劲松,干福熹,&Xiao Mufei.(2009).Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials.appl. phys. a-mater. sci. process.,94(3),627.
MLA	Jiao Xinbing,et al."Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials".appl. phys. a-mater. sci. process. 94.3(2009):627.