Surface modification of multilayer graphene using Ga ion irradiation

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	Surface modification of multilayer graphene using Ga ion irradiation
	Wang Q(王权); Shao, Ying; Ge DH(葛道晗); Yang QZ(杨启志); Ren NF(任乃飞)
刊名	JOURNAL OF APPLIED PHYSICS
	2015
卷号	117 期号:16 页码:1-7
ISSN号	0021-8979
通讯作者	王权
产权排序	3
中文摘要	The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.
关键词[WOS]	FEW-LAYER GRAPHENE ; RAMAN-SPECTROSCOPY ; SINGLE-LAYER ; DEFECTS ; CARBON ; FILMS
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000353831100066
内容类型	期刊论文
源URL	[http://ir.sia.cn/handle/173321/18738]
专题	沈阳自动化研究所_机器人学研究室
推荐引用方式 GB/T 7714	Wang Q,Shao, Ying,Ge DH,et al. Surface modification of multilayer graphene using Ga ion irradiation[J]. JOURNAL OF APPLIED PHYSICS,2015,117(16):1-7.
APA	Wang Q,Shao, Ying,Ge DH,Yang QZ,&Ren NF.(2015).Surface modification of multilayer graphene using Ga ion irradiation.JOURNAL OF APPLIED PHYSICS,117(16),1-7.
MLA	Wang Q,et al."Surface modification of multilayer graphene using Ga ion irradiation".JOURNAL OF APPLIED PHYSICS 117.16(2015):1-7.