Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

	Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
	XirenChen YuxinSong LiangZhu S.M.Wang WeiLu ShaolingGuoandJunShao
刊名	J.Appl.Phys
	2013-01-01
卷号	113 期号:15
关键词	Quantumwells Photoluminescence III-Vsemiconductors Thinfilmgrowth Bandgap
学科主题	红外基础研究
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7730]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	XirenChen YuxinSong LiangZhu S.M.Wang WeiLu ShaolingGuoandJunShao. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence[J]. J.Appl.Phys,2013,113(15).
APA	XirenChen YuxinSong LiangZhu S.M.Wang WeiLu ShaolingGuoandJunShao.(2013).Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence.J.Appl.Phys,113(15).
MLA	XirenChen YuxinSong LiangZhu S.M.Wang WeiLu ShaolingGuoandJunShao."Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence".J.Appl.Phys 113.15(2013).