| Negative Persistent Photoconductivity Effect on Weak Anti‐Localization in Hetero‐Interface of InSb/GaAs(100) | |
| 2007 | |
| 会议名称 | 28th International Conference on the Physics of Semiconductors (ICPS-28) |
| 关键词 | inSb/GaAs hetero-interface weak anti-localization spin-orbit interaction persistent photoconductivity |
| 语种 | 英语 |
| 内容类型 | 会议论文 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10918]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 会议论文 |
| 推荐引用方式 GB/T 7714 | . Negative Persistent Photoconductivity Effect on Weak Anti‐Localization in Hetero‐Interface of InSb/GaAs(100)[C]. 见:28th International Conference on the Physics of Semiconductors (ICPS-28). |
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