| Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment | |
| 刊名 | ACS Applied Materials and Interfaces
 |
| 2013 | |
| 卷号 | 5期号:11页码:4739-4744 |
| 关键词 | MoS2 oxygen plasma treatment atomic layer deposition Al2O3 HfO2 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10876]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment[J]. ACS Applied Materials and Interfaces,2013,5(11):4739-4744. |
| APA | (2013).Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment.ACS Applied Materials and Interfaces,5(11),4739-4744. |
| MLA | "Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment".ACS Applied Materials and Interfaces 5.11(2013):4739-4744. |
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