| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability | |
| 刊名 | ACS NANO
 |
| 2013 | |
| 卷号 | 7期号:11页码:10354-10361 |
| 关键词 | HfO2 MoS2 TMD high-kappa ALD band offsets nanoelectronics |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10874]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability[J]. ACS NANO,2013,7(11):10354-10361. |
| APA | (2013).HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability.ACS NANO,7(11),10354-10361. |
| MLA | "HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability".ACS NANO 7.11(2013):10354-10361. |
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