HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability | |
刊名 | ACS NANO
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2013 | |
卷号 | 7期号:11页码:10354-10361 |
关键词 | HfO2 MoS2 TMD high-kappa ALD band offsets nanoelectronics |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://202.127.2.71:8080/handle/181331/10874] ![]() |
专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
推荐引用方式 GB/T 7714 | . HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability[J]. ACS NANO,2013,7(11):10354-10361. |
APA | (2013).HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability.ACS NANO,7(11),10354-10361. |
MLA | "HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability".ACS NANO 7.11(2013):10354-10361. |
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