| Direct Growth of Patterned Graphene on SiO2 Substrates without the Use of Ctalysts or Lithography | |
| 刊名 | NANOSCALE
 |
| 2014 | |
| 卷号 | 6期号:17页码:10100-10105 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://202.127.2.71:8080/handle/181331/10822]  |
| 专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
| 推荐引用方式 GB/T 7714 | . Direct Growth of Patterned Graphene on SiO2 Substrates without the Use of Ctalysts or Lithography[J]. NANOSCALE,2014,6(17):10100-10105. |
| APA | (2014).Direct Growth of Patterned Graphene on SiO2 Substrates without the Use of Ctalysts or Lithography.NANOSCALE,6(17),10100-10105. |
| MLA | "Direct Growth of Patterned Graphene on SiO2 Substrates without the Use of Ctalysts or Lithography".NANOSCALE 6.17(2014):10100-10105. |
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