Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses
	Zhang Guangjun ; Gan FX(干福熹) ; Lysenko Sergiy ; Liu Huimin
刊名	j. appl. phys.
	2007
卷号	101 期号:3 页码:33127
关键词	PHASE-CHANGE INDUCED CRYSTALLIZATION SEMICONDUCTORS RECOMBINATION SILICON GOLD THERMALIZATION TRANSITIONS RELAXATION ABSORPTION
ISSN号	0021-8979
中文摘要	the femtosecond pump-probe technique was used to study the carrier dynamics of amorphous ge2sb2te5 films. with carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. on the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. the relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). a possible interpretation of the relaxation processes is elucidated. in the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. it is followed by a recombination process of trapped carriers at later delay time. (c) 2007 american institute of physics.
学科主题	光存储
收录类别	EI
语种	英语
WOS记录号	WOS:000244250100027
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/3961]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Zhang Guangjun,Gan FX,Lysenko Sergiy,et al. Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses[J]. j. appl. phys.,2007,101(3):33127.
APA	Zhang Guangjun,干福熹,Lysenko Sergiy,&Liu Huimin.(2007).Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses.j. appl. phys.,101(3),33127.
MLA	Zhang Guangjun,et al."Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses".j. appl. phys. 101.3(2007):33127.