| 题名 | 光学浮区法生长β-Ga2O3单晶及性能研究 |
| 作者 | 肖海林 |
| 学位类别 | 硕士 |
| 答辩日期 | 2016 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 夏长泰 |
| 关键词 | β-Ga2O3 Sn:β-Ga2O3 Si:β-Ga2O3 β-(Al,Ga)2O3 光学浮区法 |
| 其他题名 | Growth and Characterization of β-Ga2O3 Single Crystals by Optical Floating Zone Method |
| 中文摘要 | β-Ga2O3单晶的禁带宽度约为4.9 eV，是一种直接带隙半导体材料，其物理化学性能优异。近年来，β-Ga2O3单晶的质量显著提高，物性研究更加深入，已开始在功率电子器件及深紫外光电子器件领域显示出重要的应用前景。 纯β-Ga2O3单晶在本质上是绝缘体，在还原性气氛下生长时由于形成了氧空位会具有一定的导电性，但是这种导电性不稳定。为了获得导电性可控并稳定的β-Ga2O3单晶，本文尝试采用光学浮区法生长Si:β-Ga2O3和Sn:β-Ga2O3，并分析了Si4+和Sn4+的掺杂对晶体光学性能及电学性能的影响。 由于禁带宽度的可调节性可以使得功率电子器件和紫外光电子器件的设计更加自由，因此本文尝试通过掺杂Al3+对β-Ga2O3单晶的禁带宽度进行调节，并研究了不同组分浓度对于混晶β-(Al, Ga)2O3光学性能的影响。 本论文的主要内容包括： 1) 利用光学浮区法生长了纯β-Ga2O3单晶。利用双晶摇摆曲线和阴极荧光像来分析晶体的质量，结果显示获得晶体的双晶摇摆曲线半峰全宽为79.2″，晶体缺陷密度为6.51×105/cm2。利用阿基米德排水法对所得晶体进行密度测定，测量结果为5.89 g/cm3，与理论值相符。 2) 使用SnO2多晶粉末为掺杂剂，利用光学浮区法生长了不同浓度的Sn:β-Ga2O3单晶。研究了Sn4+掺杂对Sn:β-Ga2O3单晶性能的影响，包括吸收光谱、拉曼光谱、荧光光谱和电学性能。 3) 使用单质Si粉末和SiO2多晶粉末为掺杂剂，利用光学浮区法生长了Si:β-Ga2O3单晶，探讨了不同掺杂剂对Si:β-Ga2O3单晶性能的影响，包括吸收光谱、拉曼光谱和电学性能。 4) 利用光学浮区法生长了不同组分浓度的β-(Al, Ga)2O3混晶，探讨了组分浓度对β-(Al, Ga)2O3混晶晶体结构及光学性能的影响。 |
| 英文摘要 | The monocrystalline β-Ga2O3 is a semiconductor material with a wide bandgap of about 4.9 eV, also with outstanding chemical and physical properties. In recent years, β-Ga2O3 single crystals with higher crystalline quality have been obtained; researches on their physical properties have been done with more scientific depth; and consequently their significant application prospects in fabricating power electronic devices and deep ultraviolet optoelectronic devices have been demonstrated. The main content is as follows: 1) β-Ga2O3 single crystal was obtained by optical floating zone（OFZ）method. The quality of the crystal was investigated by the X-ray rocking curve and cathodoluminescence. Results showed that the full-width at half-maximum (FWHW) was 79.2″ and the defect density was 6.51×105/cm2. The density of β-Ga2O3 single crystal was measured by means of Archimedes drainage method. 2) Sn:β-Ga2O3 single crystals with different Sn4+ concentration were grown by optical floating zone method. The influences of Sn4+ doping on optical and electrical properties were investigated. 3) Si:β-Ga2O3 single crystals with two different dopants (Si and SiO2) have been gotten by optical floating zone method. The effects of different dopants on properties, e.g. absorption spectrums, Raman spectrums and electrical properties, were investigated. 4) β-(Al, Ga)2O3 mixed crystals with different Al3+ concentration were obtained by optical floating zone method. The effects of Al3+ doping on crystal structure and optical properties were investigated. |
| 语种 | 中文 |
| 内容类型 | 学位论文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/17007]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 肖海林. 光学浮区法生长β-Ga2O3单晶及性能研究[D]. 中国科学院上海光学精密机械研究所. 2016. |
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