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题名	激光热刻蚀材料的制备及其直写光刻性质研究
作者	邓常猛
学位类别	博士
答辩日期	2013
授予单位	中国科学院上海光学精密机械研究所
导师	吴谊群
关键词	激光热刻蚀 杯[4]芳烃衍生物 GeSbTe 激光直写光刻
其他题名	Preparation and properties of direct laser writing thermal lithography materials
中文摘要	激光热刻蚀直写光刻技术是近年来发展起来的制备微纳图形结构的新技术，在光、电元器件制备、信息工业等领域具有重要应用前景。本文开展了新型激光热刻蚀材料及其直写光刻性质的研究。利用酸催化缩合反应制备了9种文献未见报道的新型杯[4]芳烃衍生物，研究了新材料的热学性质、光学性质、溶解性能和成膜性能等。以新化合物作为激光热刻蚀材料，在激光热效应的作用下可直接得到特征尺寸小于激光光源波长（405nm）的凸起和凹坑型的图形结构。凹坑点的直径和凹坑线的宽度分别达到302nm和235nm，凸起点的直径和凸起线的宽度均可达到235nm。利用数值模拟计算温度分布特征，分析了凹坑型与凸起型图形结构的形成机制。由于图形结构在激光作用下直接形成，无需掩模版、也不需要后续的显影刻蚀，不但可简化工序、降低成本，同时还可避免腐蚀性显影剂可能造成的环境污染。通过等离子体干法刻蚀实现了图形结构的转移，显示了新材料的应用前景。 系统研究了GeSbTe相变材料的激光热刻蚀特性与影响因素，分析了选择性刻蚀的机理，优化了GeSbTe相变材料选择性刻蚀条件。GeSbTe相变薄膜在25%的四甲基氢氧化铵溶液中的刻蚀选择比（非晶态的刻蚀速率比晶态刻蚀速率）达到26。刻蚀后图形光滑、整洁、轮廓清晰，表面粗糙度（AFM测量的Ra值）小于2.5nm。分析了衬底对GeSbTe图形附着性的影响，通过实验得到了改善图形附着性的衬底材料。 研究结果可为新型激光热刻蚀材料的进一步研究与应用奠定基础。
英文摘要	Direct laser writing thermal lithography is a new method for fabricating micro/nano patterns and it has greatly potential application in information industries for manufacture of optical and electrical devices. In the thesis, a study is carried out for preparation and properties of direct laser writing thermal lithography materials. 9 brand new calix[4]arene derivatives are synthesized by acid catalysis condensation reaction, and their thermal, optical, solubility and film-forming properties are investigated for application as laser thermal lithography materials. Both concave and convex patterns are obtained by using different new calix[4]arene derivatives, and the size of patterns can be smaller than the wavelength of laser source. The diameter of concave and convex patterns in dot shape are reached to 302 nm and 235 nm, respectively, and the width of both concave and convex line-shaped patterns are approach to 235 nm, with a blue laser direct writing system (laser wavelength is 405nm). The mechanism and the law of pattern formation are investigated by computational simulation of temperature variation on the surface when a film is irradiated by a focused laser. The formation of both concave and convex patterns is a maskless and development-free lithography method, thus the lithography process is well simplified, lower the cost, and avoid the possibly environmental pollution of the developer. The concave patterns can be successfully transferred onto the substrate by plasma etching, which show the application prospect of the new materials. The properties of GeSbTe phase change material for laser thermal lithography are systematic studied, including optimization of selective etchant, the mechanism of selective etching, and the affection of interface layer between GeSbTe film and substrate on adhesion of patterns. The ratio of selective etching (amorphous etching rate than crystalline etching rate) approaches to 26 with a 25% tetramethyl-ammonium as etchant. After etching, the patterns are smooth, regular, clean and tidy; the surface roughness is below 2.5 nm (the value of Ra measured by AFM). An interface layer material is obtained to improve the adhesion of patterns on substrate by investigating the affection of different interface layer materials on adhesion of patterns. The study will be a foundation for further investigation and application of direct laser writing thermal lithography materials.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/15742]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	邓常猛. 激光热刻蚀材料的制备及其直写光刻性质研究[D]. 中国科学院上海光学精密机械研究所. 2013.

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