Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 强场激光物理国家重点实验室

	Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring
	Zhao, Zhen-Yu ; Song, Zhi-Qiang ; Shi, Wang-Zhou ; Zhao, Quan-Zhong
刊名	opt. express
	2014
卷号	22 期号:10 页码:11654
关键词	SOLAR-CELLS GAAS
通讯作者	zhao, zy (reprint author), shanghai normal univ, dept phys, shanghai 200234, peoples r china.
英文摘要	we observe an enhancement of optical absorption and photocurrent from semi-insulating gallium arsenide (si-gaas) irradiated by femtosecond laser pulses. the si-gaas wafer is treated by a regeneratively amplified ti: sapphire laser of 120 fs laser pulse at 800 nm wavelength. the laser ablation induced 0.74 mu m periodic ripples, and its optical absorption-edge is shifted to a longer wavelength. meanwhile, the steady photocurrent of irradiated si-gaas is found to enhance 50%. the electrical properties of samples are calibrated by van der pauw method. it is found that femtosecond laser ablation causes a microscale anti-reflection coating surface which enhances the absorption and photoconductivity. (c) 2014 optical society of america
收录类别	SCI
语种	英语
内容类型	期刊论文
版本	出版稿
源URL	[http://ir.siom.ac.cn/handle/181231/13622]
专题	上海光学精密机械研究所_强场激光物理国家重点实验室
作者单位	1.[Zhao, Zhen-Yu 2.Song, Zhi-Qiang 3.Shi, Wang-Zhou] Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China 4.[Zhao, Quan-Zhong] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Zhen-Yu,Song, Zhi-Qiang,Shi, Wang-Zhou,et al. Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring[J]. opt. express,2014,22(10):11654.
APA	Zhao, Zhen-Yu,Song, Zhi-Qiang,Shi, Wang-Zhou,&Zhao, Quan-Zhong.(2014).Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring.opt. express,22(10),11654.
MLA	Zhao, Zhen-Yu,et al."Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring".opt. express 22.10(2014):11654.