Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 空间激光信息技术研究中心

	Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films
	Huang, Lu ; Jin, Jing ; Shi, Weimin ; Yuan, Zhijun ; Yang, Weiguang ; Cao, Zechun ; Wang, Linjun ; Zhou, Jun ; Lou, Qihong
刊名	mater. sci. semicond. process
	2013
卷号	16 期号:6 页码:1982
通讯作者	huang, l (reprint author), shanghai univ, sch mat sci & engn, 149 yanchang rd, shanghai 200072, peoples r china.
英文摘要	the effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-si:h) thin films was studied theoretically and experimentally. the thin films were irritated with a frequency-doubled (lambda=532 nm) nd:yag pulsed nanosecond laser. an effective finite element model was built to predict the melting threshold and the optimized laser energy density for crystallization of intrinsic amorphous silicon. simulation analysis revealed variations in the temperature distribution with time and melting depth. the highest crystalline fraction measured by raman spectroscopy (84.5%) agrees well with the optimized laser energy density (1000 mj/cm(2)) in the transient-state simulation. the surface morphology of the thin films observed by optical microscopy is in fairly good agreement with the temperature distribution in the steady-state simulation. (c) 2013 elsevier ltd. all rights reserved.
收录类别	SCI
语种	英语
内容类型	期刊论文
版本	出版稿
源URL	[http://ir.siom.ac.cn/handle/181231/14708]
专题	上海光学精密机械研究所_空间激光信息技术研究中心
作者单位	1.[Huang, Lu 2.Jin, Jing 3.Shi, Weimin 4.Yang, Weiguang 5.Cao, Zechun 6.Wang, Linjun] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China 7.[Yuan, Zhijun 8.Zhou, Jun 9.Lou, Qihong] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Novel Laser Tech & Applicat Syst Lab, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Huang, Lu,Jin, Jing,Shi, Weimin,et al. Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films[J]. mater. sci. semicond. process,2013,16(6):1982.
APA	Huang, Lu.,Jin, Jing.,Shi, Weimin.,Yuan, Zhijun.,Yang, Weiguang.,...&Lou, Qihong.(2013).Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films.mater. sci. semicond. process,16(6),1982.
MLA	Huang, Lu,et al."Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films".mater. sci. semicond. process 16.6(2013):1982.