XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide
	Deng, Changmeng ; Geng, Yongyou ; Wu, Yiqun
	2013
会议名称	international workshop on information storage / 9th international symposium on optical storage
通讯作者	wu, yq (reprint author), chinese acad sci, shanghai inst opt & fine mech, key lab mat sci & technol high power lasers, shanghai 201800, peoples r china.
英文摘要	phase change lithography has pretty potential applications for high density optical data storage mastering and micro/nano structure patterning because it is not restricted by optical diffraction limitation and at relatively low cost. gesbte, as an initially investigated material for phase change lithography, its mechanism of selective etching in inorganic or organic alkaline aqueous solutions, such as naoh and tetramethylammonium hydroxide (tmah), is still unknown. in this paper, xps measurement is used to study the selective wet etching mechanism of gesbte phase change thin films with tmah solution, and the results show that oxidization played an important role in the etching process. ge, sb and te are oxidized into geo2, sb2o5 and teo2, respectively, and then as the corresponding salts dissolved into the etchant solution. ge-x (x is ge, sb or te) bonds are first broken in the etching, then sb-x bonds, and finally te-te bonds. to confirm the effect of oxidization in the etching, h2o2 as an oxidant is added into the tmah solution, and the etching rates are increased greatly for both amorphous and crystalline states. the selective etching mechanism of ge2sb2te5 phase change films is discussed by the difference of bonds breakage between the amorphous and crystalline states.
收录类别	CPCI
会议录	2012 international workshop on information storage and ninth international symposium on optical storage
会议录出版者	spie-int soc optical engineering
语种	英语
内容类型	会议论文
源URL	[http://ir.siom.ac.cn/handle/181231/17071]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	1.[Deng, Changmeng 2.Geng, Yongyou 3.Wu, Yiqun] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat Sci & Technol High Power Lasers, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Deng, Changmeng,Geng, Yongyou,Wu, Yiqun. XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide[C]. 见:international workshop on information storage / 9th international symposium on optical storage.