Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films
	Zhang GJ(张广军) ; Gu DH(顾冬红) ; Gan FX(干福熹) ; Jiang XW(姜雄伟) ; Chen QX(陈清席)
刊名	thin solid films
	2005
卷号	474 期号:1-2 页码:169
关键词	femtosecond laser crystallization amorphous materials annealing
ISSN号	0040-6090
中文摘要	crystallization in amorphous ge2sb2te5 films by irradiation with femtosecond laser was investigated. the reflectivity and x-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous ge2sb2te5 films under the irradiation of fermosecond laser with an average power of 65 mw at a frequency of 1000 hz and a pulsed width of 120 fs. the surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光存储
收录类别	EI
语种	英语
WOS记录号	WOS:000226886900026
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/3777]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Zhang GJ,Gu DH,Gan FX,et al. Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films[J]. thin solid films,2005,474(1-2):169, 172.
APA	张广军,顾冬红,干福熹,姜雄伟,&陈清席.(2005).Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films.thin solid films,474(1-2),169.
MLA	张广军,et al."Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films".thin solid films 474.1-2(2005):169.