Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method

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	Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method
	Wang, Ying 1,2; Yang, Zaixing 3,4,5; Wu, Xiaofeng 1,2; Han, Ning 1,2; Liu, Hanyu 6; Wang, Shuobo 6; Li, Jun 6; Tse, WaiMan 3; Yip, Senpo 3,4,5; Chen, Yunfa1,2
刊名	NANOSCALE RESEARCH LETTERS
	2016-04-12
卷号	11 期号:APR 页码:191
关键词	GaAs Chemical vapor deposition Two-source Contact printing Nanowire parallel arrays Schottky solar cells
ISSN号	1556-276X
英文摘要	Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of similar to 0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.
WOS标题词	Science & Technology ; Technology ; Physical Sciences
类目[WOS]	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]	ELECTRONIC TRANSPORT-PROPERTIES ; SOLAR-CELLS ; EVAPORATION ; EFFICIENCY ; MECHANISM ; MOBILITY ; LAYER
收录类别	SCI
语种	英语
WOS记录号	WOS:000374287400001
内容类型	期刊论文
源URL	[http://ir.ipe.ac.cn/handle/122111/21013]
专题	过程工程研究所_多相复杂系统国家重点实验室
作者单位	1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Urban Atmospher Environm, Xiamen 361021, Peoples R China 3.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China 4.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China 5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 6.Beijing Natl Day Sch, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Wang, Ying,Yang, Zaixing,Wu, Xiaofeng,et al. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method[J]. NANOSCALE RESEARCH LETTERS,2016,11(APR):191.
APA	Wang, Ying.,Yang, Zaixing.,Wu, Xiaofeng.,Han, Ning.,Liu, Hanyu.,...&Ho, Johnny C..(2016).Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.NANOSCALE RESEARCH LETTERS,11(APR),191.
MLA	Wang, Ying,et al."Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method".NANOSCALE RESEARCH LETTERS 11.APR(2016):191.