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	Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry
	Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1
	2012
会议名称	International Journal of Thermophysics
会议日期	2012
卷号	33
页码	2082-2088
通讯作者	Li, B. (bcli@ioe.ac.cn)
中文摘要	Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.
英文摘要	Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.
收录类别	EI
语种	英语
ISSN号	0195928X
内容类型	会议论文
源URL	[http://ir.ioe.ac.cn/handle/181551/7853]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China 2.Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
推荐引用方式 GB/T 7714	Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry[C]. 见:International Journal of Thermophysics. 2012.

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