Extreme ultraviolet lithography objective design based on grouping and graphical user interface
Wang, J.; L. Wang; C. Jin; L. Miao and Y. Xie
刊名Guangxue Xuebao/Acta Optica Sinica
2015
卷号35期号:12
英文摘要Extreme ultraviolet lithography (EUVL) objective with high NA and large exposure field is the core component of lithography equipments for high volume manufacture (HVM) aiming at 22 nm node and beyond. The visual generation of the initial construction of EUVL objectives is presented based on the analysis of the valid objectives and grouping strategy. With alternation of step by step increasing NA and optimizations, /50 root mean square (RMS) composite wavefront error has been achieved in the 2 mm wide arc full field with a chord length of 26 mm. By the aids of Q-type polynomials, the maximum asphericity and diameter of mirrors have been optimized less than 45 m and 400 mm, respectively. And finally the full-field composite wavefront error is better than 0.027 RMS and the distortion is less than 1.5 nm. 2015, Chinese Laser Prees. All right reserved.
收录类别EI
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/56193]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Wang, J.,L. Wang,C. Jin,et al. Extreme ultraviolet lithography objective design based on grouping and graphical user interface[J]. Guangxue Xuebao/Acta Optica Sinica,2015,35(12).
APA Wang, J.,L. Wang,C. Jin,&L. Miao and Y. Xie.(2015).Extreme ultraviolet lithography objective design based on grouping and graphical user interface.Guangxue Xuebao/Acta Optica Sinica,35(12).
MLA Wang, J.,et al."Extreme ultraviolet lithography objective design based on grouping and graphical user interface".Guangxue Xuebao/Acta Optica Sinica 35.12(2015).
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