Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing

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	Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing
	Gao, X.; S. Xing; J. L. Tang; D. Fang; X. Fang; S. P. Wang; H. F. Zhao; F. Fang; J. H. Li; X. Y. Chu
刊名	Nanoscience and Nanotechnology Letters
	2015
卷号	7 期号:10 页码:817-821
英文摘要	Arsenic-doped MgZnO films were grown using plasma-assisted molecular beam epitaxy (MBE). The incorporation of arsenic was achieved by annealing the MgZnO films that were grown on GaAs (100) substrate. The films did not undergo phase separation and exhibited a high C-axis orientation, as determined using X-ray diffraction. The photoluminescence spectra of the samples annealed at 550 degrees C revealed an acceptable bound exciton peak at 3.400 eV when excited using a He-Cd laser (325 nm) at 10 K. The photoluminescence of the as-grown samples revealed a bound exciton peak at 3.410 eV when excited using the same conditions. It confirms that arsenic-doped MgZnO films were obtained and that the donor defects in the MgZnO films were effectively suppressed following diffusion of the arsenic.
收录类别	SCI ; EI
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/55366]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao, X.,S. Xing,J. L. Tang,et al. Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing[J]. Nanoscience and Nanotechnology Letters,2015,7(10):817-821.
APA	Gao, X..,S. Xing.,J. L. Tang.,D. Fang.,X. Fang.,...&X. H. Wang and Z. P. Wei.(2015).Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing.Nanoscience and Nanotechnology Letters,7(10),817-821.
MLA	Gao, X.,et al."Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing".Nanoscience and Nanotechnology Letters 7.10(2015):817-821.