Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process | |
Jiang, D. L.; L. Li; H. Y. Chen; H. Gao; Q. Qiao; Z. K. Xu and S. J. Jiao | |
刊名 | Applied Physics Letters |
2015 | |
卷号 | 106期号:17页码:5 |
英文摘要 | A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure. (C) 2015 AIP Publishing LLC. |
收录类别 | SCI ; EI |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/55295] |
专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jiang, D. L.,L. Li,H. Y. Chen,et al. Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process[J]. Applied Physics Letters,2015,106(17):5. |
APA | Jiang, D. L.,L. Li,H. Y. Chen,H. Gao,Q. Qiao,&Z. K. Xu and S. J. Jiao.(2015).Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process.Applied Physics Letters,106(17),5. |
MLA | Jiang, D. L.,et al."Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process".Applied Physics Letters 106.17(2015):5. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论