High spectral response of self-driven GaN-based detectors by controlling the contact barrier height | |
Sun, X. J.; D. B. Li; Z. M. Li; H. Song; H. Jiang; Y. R. Chen; G. Q. Miao and Z. W. Zhang | |
刊名 | Scientific Reports
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2015 | |
卷号 | 5页码:7 |
英文摘要 | High spectral response of self-driven GaN-based ultraviolet detectors with interdigitated finger geometries were realized using interdigitated Schottky and near-ohmic contacts. Ni/GaN/Cr, Ni/GaN/Ag, and Ni/GaN/Ti/Al detectors were designed with zero bias responsivities proportional to the Schottky barrier difference between the interdigitated contacts of 0.037 A/W, 0.083 A/W, and 0.104 A/W, respectively. Voltage-dependent photocurrent was studied, showing high gain under forward bias. Differences between the electron and hole mobility model and the hole trapping model were considered to be the main photocurrent gain mechanism. These detectors operate in photoconductive mode with large photocurrent gain and depletion mode with high speed, and can extend GaN-based metal-semiconductor-metal detector applications. |
收录类别 | SCI |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/55272] ![]() |
专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Sun, X. J.,D. B. Li,Z. M. Li,et al. High spectral response of self-driven GaN-based detectors by controlling the contact barrier height[J]. Scientific Reports,2015,5:7. |
APA | Sun, X. J..,D. B. Li.,Z. M. Li.,H. Song.,H. Jiang.,...&G. Q. Miao and Z. W. Zhang.(2015).High spectral response of self-driven GaN-based detectors by controlling the contact barrier height.Scientific Reports,5,7. |
MLA | Sun, X. J.,et al."High spectral response of self-driven GaN-based detectors by controlling the contact barrier height".Scientific Reports 5(2015):7. |
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