Ultrahigh tenability of room temperature electronic transport and ferromagnetism in dilute magnetic semiconductor and PMN-PT single-crystal-based field effect transistors via electric charge mediation

	Ultrahigh tenability of room temperature electronic transport and ferromagnetism in dilute magnetic semiconductor and PMN-PT single-crystal-based field effect transistors via electric charge mediation
	Zhu QX(朱秋香); Yang MM(杨明敏); Zheng M(郑明); Zheng RK(郑仁奎); Wang Y(王禹); Li XM(李效民); Luo HS(罗豪甦); Li XG(李晓光)
刊名	Advanced Functional Materials
	2015-10-27
卷号	25 期号:1 页码:1111
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/8349]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
推荐引用方式 GB/T 7714	Zhu QX,Yang MM,Zheng M,et al. Ultrahigh tenability of room temperature electronic transport and ferromagnetism in dilute magnetic semiconductor and PMN-PT single-crystal-based field effect transistors via electric charge mediation[J]. Advanced Functional Materials,2015,25(1):1111.
APA	朱秋香.,杨明敏.,郑明.,郑仁奎.,王禹.,...&李晓光.(2015).Ultrahigh tenability of room temperature electronic transport and ferromagnetism in dilute magnetic semiconductor and PMN-PT single-crystal-based field effect transistors via electric charge mediation.Advanced Functional Materials,25(1),1111.
MLA	朱秋香,et al."Ultrahigh tenability of room temperature electronic transport and ferromagnetism in dilute magnetic semiconductor and PMN-PT single-crystal-based field effect transistors via electric charge mediation".Advanced Functional Materials 25.1(2015):1111.