Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation

	Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation
	Zhu QX(朱秋香); Yang MM(杨明敏); Zheng M(郑明); Zheng RK(郑仁奎); Li XM(李效民); Luo HS(罗豪甦)
刊名	advanced functional materials
	2015-02-18
卷号	25 期号:7 页码:1111
语种	英语
WOS记录号	WOS:000349817100012
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/8141]
专题	上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文
推荐引用方式 GB/T 7714	Zhu QX,Yang MM,Zheng M,et al. Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation[J]. advanced functional materials,2015,25(7):1111.
APA	Zhu QX,Yang MM,Zheng M,Zheng RK,Li XM,&Luo HS.(2015).Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation.advanced functional materials,25(7),1111.
MLA	Zhu QX,et al."Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation".advanced functional materials 25.7(2015):1111.