Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage | |
Zhou, Guangdong; Zhao, Wenxi; Ma, Xiaoqing; Zhou, A. K. | |
刊名 | JOURNAL OF ALLOYS AND COMPOUNDS |
2016-09-15 | |
卷号 | 679页码:47-53 |
关键词 | Data storage Current-voltage hysteresis Switching resistance memory Ag filament |
英文摘要 | The composite MoS2/MoOx <= 3 nanobelts are synthesized by hydrothermal process at 500 K for 48 h. An asymmetric, Schottky-Omhic contacted MoS2/MoOx <= 3 nanobelts can be served as a switching resistance memory devices if the applied sweep voltage is high. The data storage effects can be clearly obtained after performing a cycle sweep voltage. The data storage effects mediated by the magnitude voltage have presented an excellent retention characteristics after stress 500 cycles sweep voltage at high voltage scan rate of 40 V/s, and have been easily "read" by a small probing voltage of 0.5 V. The uncross I-V hysteresis well maintained after performing high voltage scan rate of 500 V/s illustrates that the data can be programmed and erased with a high speed. The uncross current-voltage (I-V) hysteresis phenomenon should be attributed to the polar charges at the two ends and the space charges in the buck of the composite MoS2/MoOx <= 3 nanobelts. The excessive magnitude voltage has driven the Ag+ filament penetrating into the MoS2/MoOx <= 3 nanobelts might be responsible for the I-V hysteresis transformation from uncross to cross. (C) 2016 Elsevier B. V. All rights reserved. |
类目[WOS] | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
研究领域[WOS] | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
关键词[WOS] | RESISTIVE SWITCHING MEMORY ; FERROELECTRIC THIN-FILMS ; DEVICES ; POLARIZATION ; MECHANISM ; CHARGES ; BIPOLAR ; DIODES |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000376104900007 |
内容类型 | 期刊论文 |
源URL | [http://ir.kib.ac.cn/handle/151853/26249] |
专题 | 昆明植物研究所_资源植物与生物技术所级重点实验室 |
推荐引用方式 GB/T 7714 | Zhou, Guangdong,Zhao, Wenxi,Ma, Xiaoqing,et al. Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,679:47-53. |
APA | Zhou, Guangdong,Zhao, Wenxi,Ma, Xiaoqing,&Zhou, A. K..(2016).Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage.JOURNAL OF ALLOYS AND COMPOUNDS,679,47-53. |
MLA | Zhou, Guangdong,et al."Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage".JOURNAL OF ALLOYS AND COMPOUNDS 679(2016):47-53. |
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