Moiré-based absolute interferometry with large measurement range in wafer-mask alignment

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	Moiré-based absolute interferometry with large measurement range in wafer-mask alignment
	Di, Chengliang 1,2; Yan, Wei 2; Hu, Song 2; Yin, Didi 1,3; Ma, Chifei 1,2
刊名	IEEE Photonics Technology Letters
	2015
卷号	27 期号:4 页码:435-438
ISSN号	1041-1135
通讯作者	Yan, Wei
中文摘要	The moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE.
英文摘要	The moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE.
学科主题	Alignment - Lithography - Rapid thermal annealing
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000349111700012
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6897]
专题	光电技术研究所_微细加工光学技术国家重点实验室（开放室）
作者单位	1.University of Chinese Academy of Sciences, Beijing, China 2.State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 3.Key Laboratory of Beam Control, Chinese Academy of Sciences, Chengdu, China
推荐引用方式 GB/T 7714	Di, Chengliang,Yan, Wei,Hu, Song,et al. Moiré-based absolute interferometry with large measurement range in wafer-mask alignment[J]. IEEE Photonics Technology Letters,2015,27(4):435-438.
APA	Di, Chengliang,Yan, Wei,Hu, Song,Yin, Didi,&Ma, Chifei.(2015).Moiré-based absolute interferometry with large measurement range in wafer-mask alignment.IEEE Photonics Technology Letters,27(4),435-438.
MLA	Di, Chengliang,et al."Moiré-based absolute interferometry with large measurement range in wafer-mask alignment".IEEE Photonics Technology Letters 27.4(2015):435-438.