Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 微细加工光学技术国家重点实验室（开放室）

	Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography
	Zhang, Wei ; Yao, Na ; Wang, Changtao ; Zhao, Zeyu ; Wang, Yanqin ; Gao, Ping ; Luo, Xiangang
刊名	PLASMONICS
	2014
卷号	9 期号:6 页码:1333-1339
ISSN号	1557-1955
通讯作者	Luo, XG (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Peoples R China.
中文摘要	Off axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20).
英文摘要	Off axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20).
学科主题	Nanolithography; Surface plasmon; Illumination design
收录类别	SCI
语种	英语
WOS记录号	WOS:000345146800010
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6846]
专题	光电技术研究所_微细加工光学技术国家重点实验室（开放室）
作者单位	1.[Zhang, Wei 2.Yao, Na 3.Wang, Changtao 4.Zhao, Zeyu 5.Wang, Yanqin 6.Gao, Ping 7.Luo, Xiangang] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Wei,Yao, Na,Wang, Changtao,et al. Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography[J]. PLASMONICS,2014,9(6):1333-1339.
APA	Zhang, Wei.,Yao, Na.,Wang, Changtao.,Zhao, Zeyu.,Wang, Yanqin.,...&Luo, Xiangang.(2014).Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography.PLASMONICS,9(6),1333-1339.
MLA	Zhang, Wei,et al."Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography".PLASMONICS 9.6(2014):1333-1339.