Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging | |
Wang, Qian1,2; Li, Bincheng1,3 | |
刊名 | Journal of Applied Physics |
2015 | |
卷号 | 118期号:12页码:125705 |
ISSN号 | 0021-8979 |
通讯作者 | Li, Bincheng |
中文摘要 | Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC. |
英文摘要 | Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC. |
学科主题 | Carrier lifetime - Imaging techniques - Photoelectricity - Polymerase chain reaction - Radiometry - Semiconducting silicon - Silicon |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000362565800075 |
内容类型 | 期刊论文 |
源URL | [http://ir.ioe.ac.cn/handle/181551/6639] |
专题 | 光电技术研究所_薄膜光学技术研究室(十一室) |
作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, China 2.University of the Chinese Academy of Sciences, Beijing, China 3.School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China |
推荐引用方式 GB/T 7714 | Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. Journal of Applied Physics,2015,118(12):125705. |
APA | Wang, Qian,&Li, Bincheng.(2015).Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging.Journal of Applied Physics,118(12),125705. |
MLA | Wang, Qian,et al."Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging".Journal of Applied Physics 118.12(2015):125705. |
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