Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学技术研究室（十一室）

	Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
	Ren, Sheng-Dong 1,2; Li, Bin-Cheng 1; Gao, Li-Feng 1; Wang, Qian 1,2
刊名	Chinese Physics B
	2013
卷号	22 期号:5 页码:057202
ISSN号	16741056
通讯作者	Li, B.-C. (bcli@ioe.ac.cn)
中文摘要	A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.
英文摘要	A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.
学科主题	Ion implantation - Photoelectricity - Radiometers - Radiometry - Silicon - Time domain analysis
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000319498300072
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6617]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China 2.University of the Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式 GB/T 7714	Ren, Sheng-Dong,Li, Bin-Cheng,Gao, Li-Feng,et al. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. Chinese Physics B,2013,22(5):057202.
APA	Ren, Sheng-Dong,Li, Bin-Cheng,Gao, Li-Feng,&Wang, Qian.(2013).Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers.Chinese Physics B,22(5),057202.
MLA	Ren, Sheng-Dong,et al."Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers".Chinese Physics B 22.5(2013):057202.