Design of X-band GaAs power amplifier

	Design of X-band GaAs power amplifier
	Xu, Hui; Li, Mimi; Xie, Yifang; Huang, Yonghui
	2015
会议名称	6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
会议日期	October 28, 2015 - October 30, 2015
会议地点	Shanghai, China
页码	521-524
英文摘要	This paper proposes a design of X-band GaAs power amplifier with the technology of external impedance matching. According to the scattering parameter (S parameter) of field effect tube (FET) provided by manufacturer, the matching circuit and direct current (DC) bias circuit of power amplifier can be designed. The advantage of this method is that the work frequency, efficiency, gain and output power can be designed according to the actual situation by engineers autonomously. In addition, the method has the advantages of low cost and high efficiency. Simulation and practical measured data show that, when the center frequency is 8.2 GHz, the small signal gain is 8.1 dB, and the maximum output power is 31.25 dBm and the maximum power added efficiency (PAE) is 33.62 %. © 2015 IEEE.
收录类别	EI
会议录	2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
会议录出版者	Institute of Electrical and Electronics Engineers Inc.
语种	英语
ISBN号	9781467374415
内容类型	会议论文
源URL	[http://ir.nssc.ac.cn/handle/122/5559]
专题	国家空间科学中心_空间技术部
推荐引用方式 GB/T 7714	Xu, Hui,Li, Mimi,Xie, Yifang,et al. Design of X-band GaAs power amplifier[C]. 见:6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015. Shanghai, China. October 28, 2015 - October 30, 2015.