Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure

	Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure
	Li, P.G.; Zhi, Y.S.; Wang, P.C.; Sun, Z.B.; Li, L.H.; An, Y.H.; Guo, D.Y.; Tang, W.H.; Xiao, J.H.
刊名	Applied Physics A: Materials Science and Processing
	2016
卷号	122 期号:7
ISSN号	0947-8396
通讯作者	Tang, W.H. (whtang@bupt.edu.cn)
英文摘要	Ag/GaOx/NSTO/Ag structures were fabricated, and the electrical properties measurement results show that the device behaviors a unipolar resistance switching characteristic with bi-stable resistance ratio of three orders. In the positive voltage region, the dominant conducting mechanism of high resistance state obeys Poole–Frenkel emission rules, while in the negative region, that obeys space-charge-limited current mechanism. Both the I–V curves of ON and OFF states and temperature-dependent variation resistances indicate that the unipolar resistance switching behavior can be explained by the formation/rupture of conductive filaments, which composed of oxygen vacancies. The stable switching results demonstrated that the structure can be applied in resistance random access memory devices. © 2016, Springer-Verlag Berlin Heidelberg.
收录类别	EI
语种	英语
内容类型	期刊论文
源URL	[http://ir.nssc.ac.cn/handle/122/5538]
专题	国家空间科学中心_空间技术部
推荐引用方式 GB/T 7714	Li, P.G.,Zhi, Y.S.,Wang, P.C.,et al. Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure[J]. Applied Physics A: Materials Science and Processing,2016,122(7).
APA	Li, P.G..,Zhi, Y.S..,Wang, P.C..,Sun, Z.B..,Li, L.H..,...&Xiao, J.H..(2016).Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure.Applied Physics A: Materials Science and Processing,122(7).
MLA	Li, P.G.,et al."Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure".Applied Physics A: Materials Science and Processing 122.7(2016).