Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter

	Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter
	Wang, Mei ; Liang, Lingyan ; Luo, Hao ; Zhang, Shengnan ; Zhang, Hongliang ; Javaid, Kashif ; Cao, Hongtao
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
卷号	37 期号:4 页码:422-425
ISSN号	0741-3106
公开日期	2016-09-18
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13040]
专题	宁波材料技术与工程研究所_2016专题
推荐引用方式 GB/T 7714	Wang, Mei,Liang, Lingyan,Luo, Hao,et al. Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(4):422-425.
APA	Wang, Mei.,Liang, Lingyan.,Luo, Hao.,Zhang, Shengnan.,Zhang, Hongliang.,...&Cao, Hongtao.(2016).Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter.IEEE ELECTRON DEVICE LETTERS,37(4),422-425.
MLA	Wang, Mei,et al."Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter".IEEE ELECTRON DEVICE LETTERS 37.4(2016):422-425.