In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process

	In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process
	Zhang, Sheng ; Lu, Ziyu ; Sheng, Jiang ; Gao, Pingqi ; Yang, Xi ; Wu, Sudong ; Ye, Jichun ; Kambara, Makoto
刊名	APPLIED PHYSICS EXPRESS
	2016
卷号	9 期号:5
ISSN号	1882-0778
公开日期	2016-09-18
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13001]
专题	宁波材料技术与工程研究所_2016专题
推荐引用方式 GB/T 7714	Zhang, Sheng,Lu, Ziyu,Sheng, Jiang,et al. In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process[J]. APPLIED PHYSICS EXPRESS,2016,9(5).
APA	Zhang, Sheng.,Lu, Ziyu.,Sheng, Jiang.,Gao, Pingqi.,Yang, Xi.,...&Kambara, Makoto.(2016).In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process.APPLIED PHYSICS EXPRESS,9(5).
MLA	Zhang, Sheng,et al."In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process".APPLIED PHYSICS EXPRESS 9.5(2016).