Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells | |
Zhuge, Fei ; Li, Kang ; Fu, Bing ; Zhang, Hongliang ; Li, Jun ; Chen, Hao ; Liang, Lingyan ; Gao, Junhua ; Cao, Hongtao ; Liu, Zhimin ; Luo, Hao | |
刊名 | AIP ADVANCES
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2015 | |
卷号 | 5期号:5页码:- |
ISSN号 | 2158-3226 |
公开日期 | 2016-09-18 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/12502] ![]() |
专题 | 宁波材料技术与工程研究所_2015专题 |
推荐引用方式 GB/T 7714 | Zhuge, Fei,Li, Kang,Fu, Bing,et al. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells[J]. AIP ADVANCES,2015,5(5):-. |
APA | Zhuge, Fei.,Li, Kang.,Fu, Bing.,Zhang, Hongliang.,Li, Jun.,...&Luo, Hao.(2015).Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells.AIP ADVANCES,5(5),-. |
MLA | Zhuge, Fei,et al."Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells".AIP ADVANCES 5.5(2015):-. |
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