Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

	Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells
	Zhuge, Fei ; Li, Kang ; Fu, Bing ; Zhang, Hongliang ; Li, Jun ; Chen, Hao ; Liang, Lingyan ; Gao, Junhua ; Cao, Hongtao ; Liu, Zhimin ; Luo, Hao
刊名	AIP ADVANCES
	2015
卷号	5 期号:5 页码:-
ISSN号	2158-3226
公开日期	2016-09-18
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/12502]
专题	宁波材料技术与工程研究所_2015专题
推荐引用方式 GB/T 7714	Zhuge, Fei,Li, Kang,Fu, Bing,et al. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells[J]. AIP ADVANCES,2015,5(5):-.
APA	Zhuge, Fei.,Li, Kang.,Fu, Bing.,Zhang, Hongliang.,Li, Jun.,...&Luo, Hao.(2015).Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells.AIP ADVANCES,5(5),-.
MLA	Zhuge, Fei,et al."Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells".AIP ADVANCES 5.5(2015):-.