Loss of light yield of doped lead tungstate crystals after irradiation | |
He JT(何景堂); Lv YS(吕雨生); Chen DB(陈端保); Li ZH(李祖豪)![]() ![]() ![]() | |
刊名 | CHINESE PHYSICS LETTERS
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1999 | |
卷号 | 16期号:10页码:745-746 |
通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Beijing Glass Res Inst, Beijing Inorgan Crystal Lab, Beijing 100062, Peoples R China |
英文摘要 | Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Pi or Mo doping is harmful. |
学科主题 | Physics |
类目[WOS] | Physics, Multidisciplinary |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000083261500016 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/238412] ![]() |
专题 | 高能物理研究所_院士 高能物理研究所_粒子天体物理中心 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | He JT,Lv YS,Chen DB,et al. Loss of light yield of doped lead tungstate crystals after irradiation[J]. CHINESE PHYSICS LETTERS,1999,16(10):745-746. |
APA | 何景堂.,吕雨生.,陈端保.,李祖豪.,卞建国.,...&Ren, SX.(1999).Loss of light yield of doped lead tungstate crystals after irradiation.CHINESE PHYSICS LETTERS,16(10),745-746. |
MLA | 何景堂,et al."Loss of light yield of doped lead tungstate crystals after irradiation".CHINESE PHYSICS LETTERS 16.10(1999):745-746. |
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