Development of X-type DEPFET macropixel detectors

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	Development of X-type DEPFET macropixel detectors
	Zhang, C; Lechner, P; Lutz, G; Treis, J; Wolfel, S; Struder, L; Zhang, SN; Zhang SN(张双南)
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
	2008
卷号	588 期号:3 页码:389-396
关键词	DEPFET macropixel silicon drift detector X-ray astronomy x-ray spectroscopy
通讯作者	[Zhang, Chen] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China ; [Zhang, Chen ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany ; [Lutz, Gerhard] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany ; [Zhang, Chen ; Lechner, Peter ; Lutz, Gerhard ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Halbleiterlabor, D-81739 Munich, Germany ; [Lechner, Peter] PNSensor GmbH, D-80803 Munich, Germany ; [Zhang, Chen ; Zhang, Shuang Nan] Tsinghua Univ, Tsinghua Ctr Astrophys, Beijing 100084, Peoples R China ; [Zhang, Shuang Nan] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing 100039, Peoples R China
英文摘要	The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototypes with several design variants have been fabricated. The outstanding performance of these devices has been previously demonstrated. In this paper, the development of an improved variant is presented, which applies the so-called X-type DEPFET originally designed for XEUS mission as the readout element of a silicon drift detector. The measured energy resolution for Mn-K-alpha line at -30 degrees C is 122 eV with a pixel size of 1 x 1 mm(2). The excellent peak/background ratio of the spectra is observed with a collimated Fe-55 source at - 30 degrees C. The integral nonlinearity is less than 0.2% up to 160keV measured with laser charge injection. Homogeneity is also studied with the laser on a computer controlled X-Y stage. (C) 2008 Elsevier B.V. All rights reserved.
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy
类目[WOS]	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Particles & Fields ; Spectroscopy
研究领域[WOS]	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics ; Spectroscopy
原文出处	SCI
语种	英语
WOS记录号	WOS:000255558200013
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/237283]
专题	高能物理研究所_粒子天体物理中心高能物理研究所_加速器中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, C,Lechner, P,Lutz, G,et al. Development of X-type DEPFET macropixel detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2008,588(3):389-396.
APA	Zhang, C.,Lechner, P.,Lutz, G.,Treis, J.,Wolfel, S.,...&张双南.(2008).Development of X-type DEPFET macropixel detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,588(3),389-396.
MLA	Zhang, C,et al."Development of X-type DEPFET macropixel detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 588.3(2008):389-396.