Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

	Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
	Liu, JM; Liu, XL; Li, CM; Wei, HY; Guo, Y; Jiao, CM; Li, ZW; Xu, XQ; Song, HP; Yang, SY
刊名	NANOSCALE RESEARCH LETTERS
	2011
卷号	6 页码:69
通讯作者	[Liu, Jianming ; Liu, Xianlin ; Li, Chengming ; Wei, Hongyuan ; Guo, Yan ; Jiao, Chunmei ; Li, Zhiwei ; Xu, Xiaoqing ; Song, Huaping ; Yang, Shaoyan ; Zhu, Qinsen ; Wang, Zhanguo ; Yang, Anli] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Yang, Tieying ; Wang, Huanhua] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100039, Peoples R China
英文摘要	Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-mu m thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.
学科主题	Science & Technology - Other Topics; Materials Science; Physics
类目[WOS]	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Science & Technology - Other Topics ; Materials Science ; Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000290525700002
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240382]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Liu, JM,Liu, XL,Li, CM,et al. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method[J]. NANOSCALE RESEARCH LETTERS,2011,6:69.
APA	Liu, JM.,Liu, XL.,Li, CM.,Wei, HY.,Guo, Y.,...&Wang,Huanhua.(2011).Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.NANOSCALE RESEARCH LETTERS,6,69.
MLA	Liu, JM,et al."Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method".NANOSCALE RESEARCH LETTERS 6(2011):69.