Intensive emission of Dy3+ in NaGd( PO3)(4) for Hg-free lamps application | |
Zhong, JP; Liang, HB; Han, B; Tian, ZF; Su, QA; Tao, Y![]() ![]() | |
刊名 | OPTICS EXPRESS
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2008 | |
卷号 | 16期号:10页码:7508-7515 |
通讯作者 | [Zhong, Jiuping ; Liang, Hongbin ; Han, Bing ; Tian, Zifeng ; Su, Qiang] Sun Yat Sen Univ, Sch Chem & Chem Engn, State Key Lab Optoelect Mat & Technol, MOE Lab Bioinorgan & Synth Chem, Guangzhou 510275, Guangdong, Peoples R China ; [Tao, Ye] Chinese Acad Sci, Inst High Energy Phys, Lab Beijing Synchrotron Radiat, Beijing 100039, Peoples R China |
英文摘要 | The phosphor NaGd(PO3)(4):Dy3+ was synthesized by solid-state reaction technique at high temperature. The vacuum ultraviolet (VUV)-UV excitation spectra and visible emission spectra under VUV/UV excitation were investigated. The sample NaGd(PO3)(4):Dy3+ showed suitable spectroscopic characteristics such as broad and strong absorption around 172 nm, intensive emission with the chromaticity coordinates (0.33, 0.38) in warm-white light region. Additionally, this efficient white-emitting phosphor is activated by a single Dy3+ ion and with a lower preparation temperature, which tend to decrease the consumption of rare earth resource and energy. Therefore, the phosphor NGP:Dy3+ may be considered as a suitable candidate for Hg-free lamps application. (C) 2008 Optical Society of America. |
学科主题 | Optics |
类目[WOS] | Optics |
研究领域[WOS] | Optics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000256469800077 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/240120] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Zhong, JP,Liang, HB,Han, B,et al. Intensive emission of Dy3+ in NaGd( PO3)(4) for Hg-free lamps application[J]. OPTICS EXPRESS,2008,16(10):7508-7515. |
APA | Zhong, JP.,Liang, HB.,Han, B.,Tian, ZF.,Su, QA.,...&陶冶.(2008).Intensive emission of Dy3+ in NaGd( PO3)(4) for Hg-free lamps application.OPTICS EXPRESS,16(10),7508-7515. |
MLA | Zhong, JP,et al."Intensive emission of Dy3+ in NaGd( PO3)(4) for Hg-free lamps application".OPTICS EXPRESS 16.10(2008):7508-7515. |
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