Charge compensation in lead tungstate crystals doped with aliovalent ion | |
Zhu, WL; Feng, XQ![]() ![]() ![]() | |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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2002 | |
卷号 | 41期号:10页码:6089-6093 |
关键词 | lead tungstate doping interstitial oxygen defect charge compensation |
通讯作者 | Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China ; KEK, High Energy Accelerator Res Org, Turku 305, Finland ; Furukawa co, Iwaki, Fukushima 97011, Japan ; Acad Sinica, Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China |
英文摘要 | We hake previously reported a second dielectric relaxation ascribed to [2Re(pb)-O-i] in Re-doped PbWO4 (Re=La, Y) after annealing at 750degreesC. Further investigations by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) have been performed in heterovalent-ion-doped PWO before and after annealing at 850degreesC. The existence of interstitial oxygen in the Re:PWO is confirmed after annealing in air at high temperature. Heady doping with trivalent/tetravalent ion will induce interstitial oxygen ion in the scheelite PWO for charge compensation. Based on the experimental results, we construct a hypothesis to clarify the mechanism of doping at different concentrations and estimate the lead deficiency in as-grown PWO to be around tens at.ppm. |
学科主题 | Physics |
类目[WOS] | Physics, Applied |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000179893600044 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/240061] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Zhu, WL,Feng, XQ,Kobayashi, M,et al. Charge compensation in lead tungstate crystals doped with aliovalent ion[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(10):6089-6093. |
APA | Zhu, WL,Feng, XQ,Kobayashi, M,Usuki, Y,Wu, ZH,&吴忠华.(2002).Charge compensation in lead tungstate crystals doped with aliovalent ion.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(10),6089-6093. |
MLA | Zhu, WL,et al."Charge compensation in lead tungstate crystals doped with aliovalent ion".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.10(2002):6089-6093. |
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