Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

	Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection
	Li, JH; Chen, H; Cai, LC; Cui, SF; Yu, WX; Zhou, JM; Huang, Q; Mai, ZH; Zheng, WL; Jia, QJ
刊名	APPLIED PHYSICS LETTERS
	1999
卷号	74 期号:20 页码:2981-2983
通讯作者	Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Rad Facil, Beijing 100039, Peoples R China
英文摘要	We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection. We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN. It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition. The phase purity of the GaN films was examined by x-ray reciprocal space mapping. A simple kinetic growth model suggested by our results has been presented. (C) 1999 American Institute of Physics. [S0003-6951(99)01920-8].
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000080352700025
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239852]
专题	高能物理研究所_多学科研究中心高能物理研究所_加速器中心高能物理研究所_核技术应用研究中心中国科学院高能物理研究所_人力资源处中国科学院高能物理研究所_中国散裂中子源
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Li, JH,Chen, H,Cai, LC,et al. Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection[J]. APPLIED PHYSICS LETTERS,1999,74(20):2981-2983.
APA	Li, JH.,Chen, H.,Cai, LC.,Cui, SF.,Yu, WX.,...&贾全杰.(1999).Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection.APPLIED PHYSICS LETTERS,74(20),2981-2983.
MLA	Li, JH,et al."Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection".APPLIED PHYSICS LETTERS 74.20(1999):2981-2983.