Formation of Zn-ZnO core-shell nanoclusters by Zn/F sequential ion implantation
Ren, F; Guo, LP; Shi, Y; Chen, DL; Wu, ZY; Jiang, CZ; Chen DL(陈栋梁); Wu ZY(吴自玉)
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
2006
卷号39期号:3页码:488-491
通讯作者Wuhan Univ, Ctr Electron Microscopy, Wuhan 430072, Peoples R China ; Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China ; CAS, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China
英文摘要Zn nanoclusters were formed in highly-pure amorphous silica slices by 160 keV Zn ions implantation with a dose of 2 x 10(17) ions cm(-2). The Zn implanted sample was then implanted with F ions at 40 keV with 2 x 10(17) ions cm(-2). TEM and HRTEM studies indicate some core-shell nanoclusters have been formed in the Zn/F sequentially implanted sample. An extended x-ray absorption fine structure spectrum of the Zn/F sequentially implanted sample shows the existence of both Zn and ZnO. The oxygen atoms in the substrate are replaced by implanted F ions, producing 02 molecules, which partially oxidize the already formed Zn nanoclusters and form ZnO nanoshells. A bond length contraction of ZnO and Zn nanoclusters with different sizes was observed, which can be explained by the surface tension of nanoclusters and the compression stress from surrounding substrate effects. The latter was confirmed by the Fourier transform infrared attenuated total reflection spectra.
学科主题Physics
类目[WOS]Physics, Applied
研究领域[WOS]Physics
原文出处SCI
语种英语
WOS记录号WOS:000235466500012
内容类型期刊论文
源URL[http://ir.ihep.ac.cn/handle/311005/237689]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Ren, F,Guo, LP,Shi, Y,et al. Formation of Zn-ZnO core-shell nanoclusters by Zn/F sequential ion implantation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2006,39(3):488-491.
APA Ren, F.,Guo, LP.,Shi, Y.,Chen, DL.,Wu, ZY.,...&吴自玉.(2006).Formation of Zn-ZnO core-shell nanoclusters by Zn/F sequential ion implantation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,39(3),488-491.
MLA Ren, F,et al."Formation of Zn-ZnO core-shell nanoclusters by Zn/F sequential ion implantation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 39.3(2006):488-491.
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