The electronic structure of hexene on Ru(1010) surface

	The electronic structure of hexene on Ru(1010) surface
	Zhang, JH; Zhuang, YY; Wu, Y; Bao, SN; Liu, FQ; Yipulaxin-Kuirexi; Qian, HJ; Liu FQ(刘凤琴); Kui RX(奎热西); Qian HJ(钱海杰)
刊名	ACTA PHYSICO-CHIMICA SINICA
	2002
卷号	18 期号:5 页码:437-440
关键词	hexene dehydrogenated electronic structure
其他题名	己烯在Ru(1010)表面价带电子特性研究
通讯作者	Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 10039, Peoples R China
英文摘要	The adsorption of hexene(C6H12) on Ru(1010) surface has been studied by the polarized angle-resolved ultra-violet photoemission spectroscope (ARUPS) and X-ray photoemission spectroscope (XPS). The results show that the hexene absorbs in a molecular state on the Ru (10 TO) surface below 200 K, the molecular orbits of pi(CC), sigma(CC) and pi(CH) were found at 7. 5, 9. 4 and 11. 1 eV respectively. The results of the polarized ARUPS show that the sigma(CC) orbit is symmetry about a mirror plane along <1210> azimuth but the pi(CC) orbit is anti-symmetry about a mirror plane. The results suggest that the hexene molecule lies in a plane along <1210> azimuth, With warming the substrate to 200 K the pi(CH) molecular orbit increases 0. 2 eV in binding energy, and the C is core level decreases 0. 3 eV in binding energy, the results suggest that dehydrogenated of hexene occurs at 200 K.
学科主题	Chemistry
类目[WOS]	Chemistry, Physical
研究领域[WOS]	Chemistry
原文出处	SCI
语种	英语
WOS记录号	WOS:000175739600011
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/237483]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, JH,Zhuang, YY,Wu, Y,et al. The electronic structure of hexene on Ru(1010) surface[J]. ACTA PHYSICO-CHIMICA SINICA,2002,18(5):437-440.
APA	Zhang, JH.,Zhuang, YY.,Wu, Y.,Bao, SN.,Liu, FQ.,...&钱海杰.(2002).The electronic structure of hexene on Ru(1010) surface.ACTA PHYSICO-CHIMICA SINICA,18(5),437-440.
MLA	Zhang, JH,et al."The electronic structure of hexene on Ru(1010) surface".ACTA PHYSICO-CHIMICA SINICA 18.5(2002):437-440.