High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中科院半导体材料科学重点实验室

	High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
	Wang Y (Wang Yang) ; Qiu YP (Qiu Ying-Ping) ; Pan JQ (Pan Jiao-Qing) ; Zhao LJ (Zhao Ling-Juan) ; Zhu HL (Zhu Hong-Liang) ; Wang W (Wang Wei)
刊名	chinese physics letters
	2010
卷号	27 期号:11 页码:art. no. 114201
关键词	AUGER RECOMBINATION THRESHOLD CURRENT DEPENDENCE DEVICE
通讯作者	wang, y, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangyang06@semi.ac.cn
合作状况	其它
英文摘要	we fabricate 1.5 mu m ingaasp/inp tunnel injection multiple-quantum-well (ti-mqw) fabry-perot (f-p) ridge lasers. the laser heterostructures, including an inner cladding layer and an inp tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (mocvd). characteristic temperature.. 0 of 160k at 20 degrees c is obtained for 500-mu m-long lasers. t-0 is measured as high as 88k in the temperature range of 15-75 degrees c. cavity length dependence of t-0 is investigated.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t04:08:56z no. of bitstreams: 1 high characteristic temperature ingaasp-inp tunnel injection multiple-quantum-well lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t04:19:56z (gmt) no. of bitstreams: 1 high characteristic temperature ingaasp-inp tunnel injection multiple-quantum-well lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (md5); made available in dspace on 2010-12-05t04:19:56z (gmt). no. of bitstreams: 1 high characteristic temperature ingaasp-inp tunnel injection multiple-quantum-well lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (md5) previous issue date: 2010; supported by the national natural science foundation of china under grant nos 60736036, 60706009, 60777021 and 60702006, the national basic research program of china under grant nos 2006cb604901 and 2006cb604902, and the national high-tech research and development program of china under grant no 2007aa03z419,; 其它
学科主题	半导体器件
收录类别	SCI
资助信息	supported by the national natural science foundation of china under grant nos 60736036, 60706009, 60777021 and 60702006, the national basic research program of china under grant nos 2006cb604901 and 2006cb604902, and the national high-tech research and development program of china under grant no 2007aa03z419,
语种	英语
公开日期	2010-12-05
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20657]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang Y ,Qiu YP ,Pan JQ ,et al. High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers[J]. chinese physics letters,2010,27(11):art. no. 114201.
APA	Wang Y ,Qiu YP ,Pan JQ ,Zhao LJ ,Zhu HL ,&Wang W .(2010).High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers.chinese physics letters,27(11),art. no. 114201.
MLA	Wang Y ,et al."High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers".chinese physics letters 27.11(2010):art. no. 114201.