Electronic investigation of self-organized InAs quantum dots

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	Electronic investigation of self-organized InAs quantum dots
	Chen F ; Feng SL ; Yang XZ ; Zhao Q ; Wang ZM ; Wen LS
	1997
会议名称	10th international conference on superlattices, microstructures and microdevices
会议日期	jul 08-11, 1997
会议地点	lincoln, nebraska
关键词	CARRIER RELAXATION
页码	179-185
通讯作者	chen f chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china.
中文摘要	deep level transient spectroscopy (dlts) has been applied to investigate the electronic properties of self-organized inas quantum dots. the energies of electronic ground states of 2.5ml and 1.7ml inas quantum dots (qds) with respect to the conduction band of bulk gaas are about 0.21 ev and 0.09 ev, respectively. we have found that qds capture electrons by lattice relaxation through a multi-phonon emission process. the samples are qds embedded in superlattices with or without a 500 angstrom gaas spacing layer between every ten periods of a couple of gaas and inas layers. the result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.
英文摘要	deep level transient spectroscopy (dlts) has been applied to investigate the electronic properties of self-organized inas quantum dots. the energies of electronic ground states of 2.5ml and 1.7ml inas quantum dots (qds) with respect to the conduction band of bulk gaas are about 0.21 ev and 0.09 ev, respectively. we have found that qds capture electrons by lattice relaxation through a multi-phonon emission process. the samples are qds embedded in superlattices with or without a 500 angstrom gaas spacing layer between every ten periods of a couple of gaas and inas layers. the result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:38导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:38z (gmt). no. of bitstreams: 1 3063.pdf: 2460554 bytes, checksum: 19712f6d3e017386367845b998603989 (md5) previous issue date: 1997; univv nebraska, coll engn.; ctr mat res & anal.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; beijing normal univ, dept phys, beijing 100875, peoples r china
收录类别	CPCI-S
会议主办者	univv nebraska, coll engn.; ctr mat res & anal.
会议录	physics of low-dimensional structures, 12
会议录出版者	v s v co. ltd ; box 11, 105523 moscow, russia
会议录出版地	box 11, 105523 moscow, russia
学科主题	半导体物理
语种	英语
ISSN号	0204-3467
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15087]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen F,Feng SL,Yang XZ,et al. Electronic investigation of self-organized InAs quantum dots[C]. 见:10th international conference on superlattices, microstructures and microdevices. lincoln, nebraska. jul 08-11, 1997.