Electronic investigation of self-organized InAs quantum dots | |
Chen F ; Feng SL ; Yang XZ ; Zhao Q ; Wang ZM ; Wen LS | |
1997 | |
会议名称 | 10th international conference on superlattices, microstructures and microdevices |
会议日期 | jul 08-11, 1997 |
会议地点 | lincoln, nebraska |
关键词 | CARRIER RELAXATION |
页码 | 179-185 |
通讯作者 | chen f chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china. |
中文摘要 | deep level transient spectroscopy (dlts) has been applied to investigate the electronic properties of self-organized inas quantum dots. the energies of electronic ground states of 2.5ml and 1.7ml inas quantum dots (qds) with respect to the conduction band of bulk gaas are about 0.21 ev and 0.09 ev, respectively. we have found that qds capture electrons by lattice relaxation through a multi-phonon emission process. the samples are qds embedded in superlattices with or without a 500 angstrom gaas spacing layer between every ten periods of a couple of gaas and inas layers. the result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers. |
英文摘要 | deep level transient spectroscopy (dlts) has been applied to investigate the electronic properties of self-organized inas quantum dots. the energies of electronic ground states of 2.5ml and 1.7ml inas quantum dots (qds) with respect to the conduction band of bulk gaas are about 0.21 ev and 0.09 ev, respectively. we have found that qds capture electrons by lattice relaxation through a multi-phonon emission process. the samples are qds embedded in superlattices with or without a 500 angstrom gaas spacing layer between every ten periods of a couple of gaas and inas layers. the result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:38导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:38z (gmt). no. of bitstreams: 1 3063.pdf: 2460554 bytes, checksum: 19712f6d3e017386367845b998603989 (md5) previous issue date: 1997; univv nebraska, coll engn.; ctr mat res & anal.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; beijing normal univ, dept phys, beijing 100875, peoples r china |
收录类别 | CPCI-S |
会议主办者 | univv nebraska, coll engn.; ctr mat res & anal. |
会议录 | physics of low-dimensional structures, 12
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会议录出版者 | v s v co. ltd ; box 11, 105523 moscow, russia |
会议录出版地 | box 11, 105523 moscow, russia |
学科主题 | 半导体物理 |
语种 | 英语 |
ISSN号 | 0204-3467 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/15087] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen F,Feng SL,Yang XZ,et al. Electronic investigation of self-organized InAs quantum dots[C]. 见:10th international conference on superlattices, microstructures and microdevices. lincoln, nebraska. jul 08-11, 1997. |
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