Observation of defects in GaN epilayers

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	Observation of defects in GaN epilayers
	Kang JY ; Liu XL ; Ogawa T
	1998
会议名称	7th international conference on defect recognition and image processing in semiconductors (drip-vii)
会议日期	sep 07-10, 1997
会议地点	templin, germany
关键词	SCATTERING SAPPHIRE GROWTH
页码	347-350
通讯作者	kang jy gakushuin univ dept phys tokyo 171 japan.
中文摘要	gan epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (lst) and raman scattering. in the lst images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. the defect density is lower in epilayer grown on substrate nitridated for a longer period. the defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. the raman shift of e-2 mode is larger in the sample grown on substrate nitridated for a longer period. our results show that the stress is higher in the sample with fewer dislocations.
英文摘要	gan epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (lst) and raman scattering. in the lst images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. the defect density is lower in epilayer grown on substrate nitridated for a longer period. the defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. the raman shift of e-2 mode is larger in the sample grown on substrate nitridated for a longer period. our results show that the stress is higher in the sample with fewer dislocations.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:37导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:37z (gmt). no. of bitstreams: 1 3061.pdf: 241070 bytes, checksum: 532f7e2c749e1180ccea4fd69ee44db0 (md5) previous issue date: 1998; deutsch forsch gemeinschaft.; freiberger compound mat.; gesell forderung angewandten opt optoelektr quantenelektr & spektroskopie ev.; wacker siltron ag.; gakushuin univ, dept phys, tokyo 171, japan; xiamen univ, dept phys, xiamen 361005, peoples r china; inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	deutsch forsch gemeinschaft.; freiberger compound mat.; gesell forderung angewandten opt optoelektr quantenelektr & spektroskopie ev.; wacker siltron ag.
会议录	defect recognition and image processing in semiconductors 1997, 160
会议录出版者	iop publishing ltd ; techno house, redcliffe way, bristol, england bs1 6nx
会议录出版地	techno house, redcliffe way, bristol, england bs1 6nx
学科主题	半导体物理
语种	英语
ISSN号	0951-3248
ISBN号	0-7503-0500-2
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15083]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang JY,Liu XL,Ogawa T. Observation of defects in GaN epilayers[C]. 见:7th international conference on defect recognition and image processing in semiconductors (drip-vii). templin, germany. sep 07-10, 1997.