Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
	Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG
	1998
会议名称	14th latin american symposiumm on solid state physics
会议日期	jan 11-16, 1998
会议地点	oaxaca, mexico
关键词	STRAIN RELAXATION HETEROSTRUCTURES
页码	93-96
通讯作者	zou lf ctr invest opt ac unidad aguascalientes juan montoro 207zona ctr aguascalientes 20000 ags mexico. 电子邮箱地址: lfzou@ags.ciateq.mx
中文摘要	gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers.
收录类别	CPCI-S
会议录	revista mexicana de fisica, 44
会议录出版者	sociedad mexicana de fisica ; apartado postal 70-348, coyoacan 04511, mexico
会议录出版地	apartado postal 70-348, coyoacan 04511, mexico
学科主题	半导体物理
语种	英语
ISSN号	0035-001x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15057]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[C]. 见:14th latin american symposiumm on solid state physics. oaxaca, mexico. jan 11-16, 1998.