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	InP-based optoelectronic devices for optical fiber communications
	Luo Y ; Chen LH ; Li TN
	1999
会议名称	1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98)
会议日期	jun 15-17, 1998
会议地点	prague, czech republic
关键词	FEEDBACK SEMICONDUCTOR-LASERS
页码	751-756
通讯作者	luo y tsing hua univ dept elect engn state key lab integrated optoelect beijing 100084 peoples r china.
中文摘要	in this contribution we report the research and development of 1.55 mu m ingaasp/inp gain-coupled dfb laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m ingaasp/inp fp and dfb lasers for communications. long wavelength strained mqw laser diodes with a very low threshold current (7-10 ma) have been fabricated. low pressure movpe technology has been employed for the preparation of the layered structure. a novel gain-coupled dfb laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. the laser structures have been prepared by hybrid growth of movpe and lpe techniques and reasonably good characteristics have been achieved for resultant lasers. high performance 1.3 mu m and 1.55 mu m ingaasp/inp dfb lasers have successfully been developed for catv and trunk line optical fiber communication.
英文摘要	in this contribution we report the research and development of 1.55 mu m ingaasp/inp gain-coupled dfb laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m ingaasp/inp fp and dfb lasers for communications. long wavelength strained mqw laser diodes with a very low threshold current (7-10 ma) have been fabricated. low pressure movpe technology has been employed for the preparation of the layered structure. a novel gain-coupled dfb laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. the laser structures have been prepared by hybrid growth of movpe and lpe techniques and reasonably good characteristics have been achieved for resultant lasers. high performance 1.3 mu m and 1.55 mu m ingaasp/inp dfb lasers have successfully been developed for catv and trunk line optical fiber communication.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:29导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:29z (gmt). no. of bitstreams: 1 3003.pdf: 272060 bytes, checksum: cb5ec4029d23eaf389e9f20cd4f887fe (md5) previous issue date: 1999; inst radio engn & electr.; acad sci czech republ, prague.; tsing hua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china; wuhan telecommun devices co, wuhan 430074, peoples r china
收录类别	CPCI-S
会议主办者	inst radio engn & electr.; acad sci czech republ, prague.
会议录	czechoslovak journal of physics, 49 (5)
会议录出版者	czechoslovak jnl of physics ; fyzikalni ustav av na slovance 2, prague 180 40, czech republic
会议录出版地	fyzikalni ustav av na slovance 2, prague 180 40, czech republic
学科主题	半导体物理
语种	英语
ISSN号	0011-4626
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15023]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo Y,Chen LH,Li TN. InP-based optoelectronic devices for optical fiber communications[C]. 见:1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98). prague, czech republic. jun 15-17, 1998.

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