Self-assembled quantum dots, wires and quantum-dot lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Self-assembled quantum dots, wires and quantum-dot lasers
	Xu B
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	low dimensional structures strain molecular beam epitaxy quantum dots semiconducting III-V materials laser diodes WELL LASERS
页码	1132-1139
通讯作者	wang zg chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	molecular beam epitaxy-grown self-assembled in(ga)as/gaas and inas/inalas/inp quantum dots (qds) and quantum wires (qwrs) have been studied. by adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. the lateral ordering of qds and the vertical anti-correlation of qwrs are theoretically discussed. room-temperature (rt) continuous-wave (cw) lasing at the wavelength of 960 nm with output power of 3.6 w from both uncoated facets is achieved fi-om vertical coupled inas/gaas qds ensemble. the rt threshold current density is 218 a/cm(2). a rt cw output power of 0.6 w/facet ensures at least 3570 h lasing (only drops 0.83 db). (c) 2001 elsevier science b.v, all rights reserved.
英文摘要	molecular beam epitaxy-grown self-assembled in(ga)as/gaas and inas/inalas/inp quantum dots (qds) and quantum wires (qwrs) have been studied. by adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. the lateral ordering of qds and the vertical anti-correlation of qwrs are theoretically discussed. room-temperature (rt) continuous-wave (cw) lasing at the wavelength of 960 nm with output power of 3.6 w from both uncoated facets is achieved fi-om vertical coupled inas/gaas qds ensemble. the rt threshold current density is 218 a/cm(2). a rt cw output power of 0.6 w/facet ensures at least 3570 h lasing (only drops 0.83 db). (c) 2001 elsevier science b.v, all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:20导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:20z (gmt). no. of bitstreams: 1 2924.pdf: 296481 bytes, checksum: 00b18fb8c319d32c1e660fd8a480334a (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14957]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Self-assembled quantum dots, wires and quantum-dot lasers[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.