Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering | |
Liu JW ; Xie FQ ; Zhong DY ; Wang EG ; Liu WX ; Li SF ; Yang H | |
2001 | |
会议名称 | chinese-german workshop on characterization and development on nanosystems |
会议日期 | oct 30-nov 02, 2000 |
会议地点 | beijing, peoples r china |
关键词 | luminescence SiC nanocrystalline film rf sputtering RAMAN-SCATTERING |
页码 | s36-s39 |
通讯作者 | liu jw chinese acad sci inst phys state key lab surface phys pob 603 beijing 100080 peoples r china. |
中文摘要 | amorphous sic films are deposited on si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesc for different times by a dc self-heating method in a vacuum annealing system. the crystallization of the amorphous sic is determined by raman scattering at room temperature and x-ray diffraction. the experimental result indicates that the sic nanocrystals have formed in the films. the topography of the as-annealed films is characterized by atomic force microscopy. measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases. |
英文摘要 | amorphous sic films are deposited on si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesc for different times by a dc self-heating method in a vacuum annealing system. the crystallization of the amorphous sic is determined by raman scattering at room temperature and x-ray diffraction. the experimental result indicates that the sic nanocrystals have formed in the films. the topography of the as-annealed films is characterized by atomic force microscopy. measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:16导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:16z (gmt). no. of bitstreams: 0 previous issue date: 2001; chinese acad sci, inst phys, state key lab surface phys, beijing 100080, peoples r china; tianjin univ, sch mat sci & engn, tianjin 300072, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议录 | chinese physics, 10 |
会议录出版者 | chinese physical soc ; p o box 603, beijing 100080, peoples r china |
会议录出版地 | p o box 603, beijing 100080, peoples r china |
学科主题 | 半导体材料 |
语种 | 英语 |
ISSN号 | 1009-1963 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14925] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Liu JW,Xie FQ,Zhong DY,et al. Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering[C]. 见:chinese-german workshop on characterization and development on nanosystems. beijing, peoples r china. oct 30-nov 02, 2000. |
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