Resonant tunneling of holes in GaMnAs-related double- barrier structures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Resonant tunneling of holes in GaMnAs-related double- barrier structures
	Wu HB ; Chang K ; Xia JB ; Peeters FM
	2003
会议名称	pasps conference 2002
会议日期	jul, 2002
会议地点	wurzburg, germany
关键词	Zeeman effect GaMnAs layer double-barrier structure APPROXIMATION
页码	279-282
通讯作者	wu hb chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	using the multiband quantum transmitting boundary method (mqtbm), hole resonant tunneling through algaas/gamnas junctions is investigated theoretically. because of band-edge splitting in the dms layer, the current for holes with different spins are tuned in resonance at different biases. the bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. the resonant tunneling structure can be used as a spin filter for holes for adjusting the fermi energy and the thickness of the junctions.
英文摘要	using the multiband quantum transmitting boundary method (mqtbm), hole resonant tunneling through algaas/gamnas junctions is investigated theoretically. because of band-edge splitting in the dms layer, the current for holes with different spins are tuned in resonance at different biases. the bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. the resonant tunneling structure can be used as a spin filter for holes for adjusting the fermi energy and the thickness of the junctions.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:06导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:06z (gmt). no. of bitstreams: 1 2822.pdf: 206951 bytes, checksum: 99f63cef535b5446b402030002e1a1d9 (md5) previous issue date: 2003; pasps.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; univ instelling antwerp, dept phys, b-2610 antwerp, belgium
收录类别	CPCI-S
会议主办者	pasps.
会议录	journal of superconductivity, 16 (2)
会议录出版者	kluwer academic/plenum publ ; 233 spring st, new york, ny 10013 usa
会议录出版地	233 spring st, new york, ny 10013 usa
学科主题	半导体物理
语种	英语
ISSN号	0896-1107
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14855]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu HB,Chang K,Xia JB,et al. Resonant tunneling of holes in GaMnAs-related double- barrier structures[C]. 见:pasps conference 2002. wurzburg, germany. jul, 2002.