The diphasic nc-Si/a-Si : H thin film with improved medium-range order

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	The diphasic nc-Si/a-Si : H thin film with improved medium-range order
	Zhang S ; Liao X ; Xu Y ; Martins R ; Fortunato E ; Kong G
	2004
会议名称	20th international conference on amorphous and microcrystalline semiconductors
会议日期	aug 25-29, 2003
会议地点	campos do jordao, brazil
关键词	AMORPHOUS-SILICON FILMS SCATTERING ABSORPTION DENSITIES HYDROGEN
页码	188-191
通讯作者	zhang s chinese acad sci inst semicond state key lab surface phys beijing 100083 peoples r china. 电子邮箱地址: sz@uninova.pt
中文摘要	a series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (pecvd) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. the microstucture of the films was studied by micro-raman and fourier transform infrared (ftir) spectroscopy. the influences of the hydrogen dilution ratio of silane (r-h = [h-2]/[sih4]) and the substrate temperature (t-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. with the increase of rh from 10 to 100, a notable improvement in the medium-range order (mro) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, h-2* and their congeries. with the increase of t-s from 150 to 275 degreesc, both the short-range order and the medium range order of the silicon films are obviously improved. the photoconductivity spectra and the light induced changes of the films show that the diphasic nc-si/a-si:h films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-si:h films. (c) 2004 elsevier b.v. all rights reserved.
英文摘要	a series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (pecvd) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. the microstucture of the films was studied by micro-raman and fourier transform infrared (ftir) spectroscopy. the influences of the hydrogen dilution ratio of silane (r-h = [h-2]/[sih4]) and the substrate temperature (t-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. with the increase of rh from 10 to 100, a notable improvement in the medium-range order (mro) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, h-2* and their congeries. with the increase of t-s from 150 to 275 degreesc, both the short-range order and the medium range order of the silicon films are obviously improved. the photoconductivity spectra and the light induced changes of the films show that the diphasic nc-si/a-si:h films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-si:h films. (c) 2004 elsevier b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:03导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:03z (gmt). no. of bitstreams: 1 2785.pdf: 496229 bytes, checksum: 2171db73807975dadd3f95c8d92e70b7 (md5) previous issue date: 2004; chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed mater phys, beijing 100083, peoples r china; new univ lisbon, dept mat sci, fac sci & technol, p-2829516 caparica, portugal; nova univ, cemop, p-2829516 caparica, portugal
收录类别	CPCI-S
会议录	journal of non-crystalline solids, 338
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-3093
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14833]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang S,Liao X,Xu Y,et al. The diphasic nc-Si/a-Si : H thin film with improved medium-range order[C]. 见:20th international conference on amorphous and microcrystalline semiconductors. campos do jordao, brazil. aug 25-29, 2003.