Study of infrared luminescence from Er-implanted GaN films

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	Study of infrared luminescence from Er-implanted GaN films
	Chen WD ; Song SF ; Zhu JJ ; Wang XL ; Chen CY ; Hsu CC
	2004
会议名称	international conference on materials for advanced technologies
会议日期	dec 07-12, 2003
会议地点	singapore, singapore
关键词	doping metalorganic chemical vapor deposition molecular beam epitaxy gallium compounds semiconducting gallium compounds ERBIUM
页码	466-469
通讯作者	chen wd chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. 电子邮箱地址: wdchen@red.semi.ac.cn
中文摘要	in this study, we report the dependences of infrared luminescence properties of er-implanted gan thin films (gan:er) on the kinds of substrates used to grow gan, the growth techniques of gan, the implantation parameters and annealing procedures. the experimental results showed that the photoluminescence (pl) intensity at 1.54 mum was severely influenced by different kinds of substrates. the integrated pl peak intensity from gan:er /al2o3 (00001) was three and five times stronger than that from gan:er /si (111) grown by molecular beam epitaxy (mbe) and by metalorganic chemical vapor deposition (mocvd), respectively. the pl spectra observed from gan:er/al2o3 (0001) grown by mocvd and by mbe displayed a similar feature, but those samples grown by mocvd exhibited a stronger 1.54 mum pl. it was also found that there was a strong correlation between the pl intensity with ion implantation parameters and annealing procedures. ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. the thermal quenching of pl from 15 to 300 k was also estimated. in comparison with the integrated pl intensity at 15 k, it is reduced by only about 30 % when going up to 300 k for gan:er/al2o3 sample grown by mocvd. our results also show that the strongest pl intensity comes from gan:er grown on al2o3 substrate by mocvd. (c) 2004 elsevier b.v. all rights reserved.
英文摘要	in this study, we report the dependences of infrared luminescence properties of er-implanted gan thin films (gan:er) on the kinds of substrates used to grow gan, the growth techniques of gan, the implantation parameters and annealing procedures. the experimental results showed that the photoluminescence (pl) intensity at 1.54 mum was severely influenced by different kinds of substrates. the integrated pl peak intensity from gan:er /al2o3 (00001) was three and five times stronger than that from gan:er /si (111) grown by molecular beam epitaxy (mbe) and by metalorganic chemical vapor deposition (mocvd), respectively. the pl spectra observed from gan:er/al2o3 (0001) grown by mocvd and by mbe displayed a similar feature, but those samples grown by mocvd exhibited a stronger 1.54 mum pl. it was also found that there was a strong correlation between the pl intensity with ion implantation parameters and annealing procedures. ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. the thermal quenching of pl from 15 to 300 k was also estimated. in comparison with the integrated pl intensity at 15 k, it is reduced by only about 30 % when going up to 300 k for gan:er/al2o3 sample grown by mocvd. our results also show that the strongest pl intensity comes from gan:er grown on al2o3 substrate by mocvd. (c) 2004 elsevier b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:02导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:02z (gmt). no. of bitstreams: 1 2782.pdf: 224518 bytes, checksum: 27f8450b05c61c4ead28c20fe1d4bb65 (md5) previous issue date: 2004; chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, state key lab surface phys, beijing 100080, peoples r china
收录类别	CPCI-S
会议录	journal of crystal growth, 268 (3-4)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14829]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen WD,Song SF,Zhu JJ,et al. Study of infrared luminescence from Er-implanted GaN films[C]. 见:international conference on materials for advanced technologies. singapore, singapore. dec 07-12, 2003.